The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 16, 2004
Filed:
Mar. 15, 2002
Markku Leskelä, Espoo, FI;
Mikko Ritala, Espoo, FI;
Petra Alén, Helsinki, FI;
Marika Juppo, Espoo, FI;
ASM International N.V., , NL;
Abstract
Methods for producing metal nitride thin layers having low resistivity by means of atomic layer deposition processes comprising alternate surface reactions of metal and nitrogen source materials include using nitrogen source materials that have better reducing properties than ammonia and 1,1-dimethyl hydrazine. Suitable compounds for that purpose include those in which a hydrocarbon group bound to nitrogen, when dissociating in a homolytic manner, generates a radical that serves as a reducing agent and reacts further to generate atomic hydrogen. The nitride thin layers produced are especially suitable for use as diffusion barrier layers in integrated circuits.