Asm International N.v.

Borealis A/s

Asm Microchemistry Ltd.

Markku Leskel&auml;

Mikko Ritala

Petra Al&eacute;n

Titta Aaltonen

Marika Juppo

Tuomo Suntoloa

Timo Repo

The invention relates generally to processes for producing electrically conductive noble metal thin films on a substrate by atomic layer deposition. According to one embodiment of the invention a substrate with a surface is provided in a reaction chamber and a vaporised precursor of a noble metal is pulsed into the reaction chamber. By contacting the vaporised precursor with the surface of the substrate, no more than about a molecular layer of the metal precursor is formed on the substrate. In a next step, a pulse of molecular oxygen-containing gas is provided in the reaction chamber, where the oxygen reacts with the precursor on the substrate. Thus, high-quality metal thin films can be deposited by utilising reactions between the metal precursor and oxygen. In one embodiment, electrically conductive layers are deposited in structures that have high aspect ratio vias and trenches, local high elevation areas or other similar surface structures that make the surface rough.

Process for producing metal thin films by ALD

Methods for producing metal nitride thin layers having low resistivity by means of atomic layer deposition processes comprising alternate surface reactions of metal and nitrogen source materials include using nitrogen source materials that have better reducing properties than ammonia and 1,1-dimethyl hydrazine. Suitable compounds for that purpose include those in which a hydrocarbon group bound to nitrogen, when dissociating in a homolytic manner, generates a radical that serves as a reducing agent and reacts further to generate atomic hydrogen. The nitride thin layers produced are especially suitable for use as diffusion barrier layers in integrated circuits.

Method for preparing metal nitride thin films

This invention concerns a method for coating the inner surfaces of equipment with a layer of material. According to the invention, of the inner space of the equipment limited by the surfaces to be coated is at least partly closed, to said inner space pulses of at least two different reagents in gaseous phase are fed alternately and repeatedly and a layer of material is grown on the surfaces of the inner space according to ALE-technique by exposing the surfaces to the alternating surface reactions of the reagents. With the aid of the invention it is possible to coat pipes and tanks of desired size without using a separate growing equipment.

Method for coating inner surfaces of equipment

The invention relates to metallocen compounds having &eegr; ligands comprising at least four fused rings and having a sum of fused rings in all of its &eegr; ligands being at least 6. Such compounds are for example &lcub;&lsqb;1-(7,9-diphenylcyclopent&lsqb;a&rsqb;acenaphthadienyle)-1-phenyle-2-(7,9-diphenylcyclopent&lsqb;a&rsqb;acenaphthadienyl)&rsqb;ethane&rcub; zirconium dichloride, &lcub;&lsqb;1-(7,9-diphenycyclopent&lsqb;a&rsqb;acenaphthadienyl)-1-phenyl-2-flourenyl&rsqb;ethane&rcub; zirconium dichloride, &lsqb;bis(7,9-diphenylcyclopent&lsqb;a&rsqb;acenaphthadienyl)&rsqb; zirconium dichloride and &lsqb;bis(7,9-diphenylcyclopent&lsqb;a&rsqb;acenaphthadienyl)&rsqb;hafnium dichloride. The invention also relates to a catalyst composition comprising such as an aluminoxane. The metallocene compound and the catalyst composition can successfully be used to produce high molecular weight polyethene and long-chain branch polypropene.

Growing community of inventors

Espoo, Finland

Markku Leskelä

Growing community of inventors

Espoo, Finland

Markku Leskel&auml;

Markku Leskelä