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For the Inventor, By the Inventor

San Diego, CA, United States of America

Mark L Burgener

This inventor holds 87 USPTO granted patents and 3 published patent applications and 13 EPO patents, primarily in RF Circuit Design (CPC class H03K17-162). Top assignees: Peregrine Semiconductor Corporation, Psemi Corporation, Peregrine Semiconductor Corpopration. Active years: 1993-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Mark L Burgener. Retrieved from https://idiyas.com/inventor/mark-l-burgener

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 87 

% Patents Active = 80.5

 

Average Co-Inventor Count = 2.8

ph-index = 35

Forward Citations = 4,042(Granted Patents)

Forward Citations (Not Self Cited) = 2,935(Dec 10, 2025)


Inventors with similar research interests:


Company Filing History:

goldMedal50 out of 223 
 
Peregrine Semiconductor Corporation
 patents
silverMedal35 out of 701 
 
Psemi Corporation
 patents
bronzeMedal1 out of 1 
 
Peregrine Semiconductor Corpopration
 patent
4. 1 out of 16,283 
 
USA as Represented by Secretary of the Navy
 patents

Years Active: 1993-2026

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Areas of Expertise:
Gate Oxide Reliability
Accumulate Charge
Resonator Circuits
Modulating Resonators
MOSFET Linearity
Integrated RF Front End
Stacked Transistor Switch
Low Noise Charge Pump
Switch Circuit
Radio Frequency Signals
Integrated Level Shifter
87 patents (USPTO):Explore Patents
1. 12520525 - Method and apparatus improving gate oxide reliability by controlling accumulated charge (2026-01-06),
2. 12237822 - Method, system, and apparatus for resonator circuits and modulating resonators (2025-02-25),
3. 11967948 - Method and apparatus for use in improving linearity of MOSFETs using an accumulated charge sink (2024-04-23),
4. 11901459 - Method and apparatus improving gate oxide reliability by controlling accumulated charge (2024-02-13),
5. 11588513 - Integrated RF front end with stacked transistor switch (2023-02-21),
6. 11476823 - Method, system, and apparatus for resonator circuits and modulating resonators (2022-10-18),
7. 11362652 - Method and apparatus for use in improving linearity of MOSFETs using an accumulated charge sink (2022-06-14),
8. RE48965 - Method and apparatus improving gate oxide reliability by controlling accumulated charge (2022-03-07),
9. RE48944 - Method and apparatus for use in improving linearity of MOSFETS using an accumulated charge sink (2022-02-21),
10. 11206017 - Switch circuit and method of switching radio frequency signals (2021-12-21),
11. 11201245 - Method and apparatus improving gate oxide reliability by controlling accumulated charge (2021-12-14),
12. 11070244 - Integrated RF front end with stacked transistor switch (2021-07-20),
13. 10965276 - Low noise charge pump method and apparatus (2021-03-30),
14. 10818796 - Method and apparatus improving gate oxide reliability by controlling accumulated charge (2020-10-27),
15. 10812068 - Switch circuit and method of switching radio frequency signals (2020-10-20),

Title: Innovator Spotlight: Mark L Burgener - Driving Innovations in Semiconductor Technology

Introduction:

Mark L Burgener, a visionary inventor based in San Diego, CA, is renowned for his exceptional contributions to the field of semiconductor technology. With an impressive portfolio of 84 patents, he has been at the forefront of revolutionizing gate oxide reliability and RF front end integration in semiconductor devices.

Latest Patents:

One of his latest patents showcases his expertise in improving gate oxide reliability in SOI MOSFET devices through accumulated charge control techniques. This method and apparatus effectively enhance the performance characteristics of FETs by controlling the accumulated charge, leading to significant advancements in semiconductor technology.

Another remarkable innovation by Mark L Burgener is the development of an integrated RF front end with stacked transistor switches. This monolithic IC combines essential RF front end elements like power amplifiers, matching networks, and antenna switches, offering a comprehensive solution for portable communication devices. The inclusion of an iClass PA architecture further ensures efficient termination of unwanted harmonics in the PA output signal.

Career Highlights:

Mark L Burgener has left a lasting impact through his work at prestigious companies such as Peregrine Semiconductor Corporation and Psemi Corporation. His tenure at these organizations has been marked by groundbreaking inventions that have reshaped the semiconductor industry.

Collaborations:

Throughout his career, Mark L Burgener has collaborated with esteemed colleagues like James S Cable and Dylan J Kelly. Together, they have synergized their expertise to drive innovation and tackle complex challenges in semiconductor technology.

Conclusion:

In conclusion, Mark L Burgener stands as a pioneering force in the realm of semiconductor innovations. His groundbreaking patents and collaborative efforts have propelled the industry forward, setting new standards for excellence and ingenuity. The impact of his work continues to inspire future generations of inventors and researchers in the field of semiconductor technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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