Latham, NY, United States of America

Mark J DelaRosa

This inventor holds 2 USPTO granted patents. Top assignee: Rensselaer Polytechnic Institute. Active years: 2003-2004.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Mark J DelaRosa. Retrieved from https://idiyas.com/inventor/mark-j-delarosa

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 3.0

ph-index = 2

Forward Citations = 44(Granted Patents)


Location History:

  • Chandler, AZ (US) (2003)
  • Latham, NY (US) (2004)

Company Filing History:


Years Active: 2003-2004

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2 patents (USPTO):Explore Patents

Title: Innovations of Mark J DelaRosa

Introduction

Mark J DelaRosa is an accomplished inventor based in Latham, NY (US). He has made significant contributions to the field of integrated circuits and materials science. With a total of two patents to his name, DelaRosa's work focuses on enhancing the performance and reliability of electronic components.

Latest Patents

DelaRosa's latest patents include innovative solutions for fluorine diffusion barriers in fluorinated dielectrics used in integrated circuits. His first patent describes structures and methods for preventing fluorine diffusion from a fluorinated dielectric material with a low dielectric constant. The barriers he developed can effectively stop fluorine diffusion at temperatures as high as 450 °C. This is achieved by positioning a fluorine diffusion barrier between a fluorine-containing insulator and a conductive metal interconnect, thereby preventing the diffusion of fluorine atoms into the adjacent interconnect or barrier.

His second patent involves the atomic layer deposition of cobalt from cobalt metallorganic compounds. In this work, cobalt thin films were prepared using atomic layer deposition (ALD) techniques. The precursor cobalt(II) acetylacetonate was utilized to selectively deposit films onto iridium substrates through hydrogen reduction. Cobalt growth was successfully observed on various substrates, including SiO, silicon, fluorinated silica glass, and tantalum when silane was employed as a reducing agent.

Career Highlights

DelaRosa is affiliated with Rensselaer Polytechnic Institute, where he continues to advance research in materials science and engineering. His innovative approaches have garnered attention in the academic and industrial sectors.

Collaborations

Some of his notable coworkers include Toh-Ming Lu and Atul Kumar, who have collaborated with him on various research projects.

Conclusion

Mark J DelaRosa's contributions to the field of integrated circuits and materials science are noteworthy. His patents reflect a commitment to innovation and excellence in technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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