Rensselaer Polytechnic Institute

Mark J DelaRosa

Toh-Ming Lu

Atul Kumar

Structures and methods for preventing fluorine diffusion from a fluorinated dielectric material having a low dielectric constant are disclosed. Various fluorine diffusion barriers are described, each of which comprises doped or undoped silicon in combination with tantalum, tantalum nitride, tantalum silicide, cobalt, cobalt silicide, or mixtures thereof. Fluorine diffusion from fluorinated dielectrics is stopped by the barriers at temperatures as high as 450&deg; C. In practice, one of the disclosed fluorine diffusion barriers is positioned between a fluorine-containing insulator and a conductive metal interconnect or metal interconnect diffusion barrier, thereby preventing diffusion of the fluorine atoms into the adjacent interconnect/barrier.

Fluorine diffusion barriers for fluorinated dielectrics in integrated circuits

Cobalt thin films were prepared by atomic layer deposition (ALD). The precursor cobalt(II) acetylacetonate &lsqb;Co(C H O ) &rsqb; was used to selectively deposit films onto iridium substrates using hydrogen reduction. Cobalt growth was observed on SiO , silicon, fluorinated silica glass (FSG), and tantalum when silane was used as a reducing agent.

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Latham, NY, United States of America

Mark J DelaRosa