The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 04, 2003
Filed:
Oct. 10, 2001
Applicant:
Inventors:
Mark J. DelaRosa, Chandler, AZ (US);
Toh-Ming Lu, Loudonville, CA (US);
Atul Kumar, Fremont, NY (US);
Assignee:
Rensselaer Polytechnic Institute, Troy, NY (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B 2/500 ;
U.S. Cl.
CPC ...
C30B 2/500 ;
Abstract
Cobalt thin films were prepared by atomic layer deposition (ALD). The precursor cobalt(II) acetylacetonate [Co(C H O ) ] was used to selectively deposit films onto iridium substrates using hydrogen reduction. Cobalt growth was observed on SiO , silicon, fluorinated silica glass (FSG), and tantalum when silane was used as a reducing agent.