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For the Inventor, By the Inventor

Dallas, TX, United States of America

Mark G Harward

USPTO Granted Patents = 14

Average Co-Inventor Count = 1.7

ph-index = 7

Forward Citations = 666(Granted Patents)


Company Filing History:

goldMedal14 out of 29,279 
 
Texas Instruments Corporation
 patents

Years Active: 1991-2001

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14 patents (USPTO):Explore Patents
1. 6226766 - Method and apparatus for built-in self-test of smart memories (2001-05-01),
2. 6154861 - Method and apparatus for built-in self-test of smart memories (2000-11-28),
3. 5877059 - Method for forming an integrated circuit resistor comprising amorphous (1999-03-02),
4. 5751987 - Distributed processing memory chip with embedded logic having both data (1998-05-12),
5. 5751162 - Field programmable gate array logic module configurable as combinational (1998-05-12),
6. 5723988 - CMOS with parasitic bipolar transistor (1998-03-03),
7. 5489796 - Integrated circuit resistor comprising amorphous silicon (1996-02-06),
8. 5488315 - Adder-based base cell for field programmable gate arrays (1996-01-30),
9. 5485105 - Apparatus and method for programming field programmable arrays (1996-01-16),
10. 5469078 - Programmable logic device routing architecture (1995-11-21),
11. 5428304 - Programmable gate array with special interconnects for adjacent gates (1995-06-27),
12. 5426614 - Memory cell with programmable antifuse technology (1995-06-20),
13. 5287304 - Memory cell circuit and array (1994-02-15),
14. 5068825 - Memory cell circuit and operation thereof (1991-11-26),

Title: **Mark G Harward: Innovator in Smart Memory Technologies**

Introduction

Mark G Harward, a distinguished inventor based in Dallas, TX, has made significant contributions to the field of smart memory technologies. With an impressive portfolio of 14 patents, Harward's innovations demonstrate his commitment to enhancing data storage solutions.

Latest Patents

Among his notable inventions is the "Method and apparatus for built-in self-test of smart memories." This unique self-testing smart memory incorporates memory test circuitry that writes and reads data patterns within data RAM and broadcast RAM. The invention is designed to detect failures in memory locations, ensuring the reliability of smart memory systems. Furthermore, a data path tester within the smart memory verifies the functionality of the data path, solidifying its role in high-performance memory applications.

Career Highlights

Mark G Harward is currently associated with Texas Instruments Corporation, a leading company in semiconductor innovations. His work at Texas Instruments has established him as a key player in the development of advanced memory solutions that cater to the evolving needs of modern technology.

Collaborations

During his career, Harward has collaborated with talented coworkers, including Shivaling S Mahant-Shetti and Robert J Landers. These collaborations have played a pivotal role in fostering innovation and driving the success of various projects within the realm of smart memory technologies.

Conclusion

Mark G Harward's contributions to the field of smart memory are a testament to his ingenuity and dedication. Through his latest patents and significant collaborations, he continues to push the boundaries of technology, ensuring the advancement of data storage solutions that meet the demands of today's digital landscape.

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