The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 15, 1994
Filed:
Dec. 31, 1990
Applicant:
Inventors:
Mark G Harward, Dallas, TX (US);
Shivaling S Mahant-Shetti, Richardson, TX (US);
Howard Tigelaar, Allen, TX (US);
Assignee:
Texas Instruments Incorporated, Dallas, TX (US);
Primary Examiner:
Int. Cl.
CPC ...
G11C / ;
U.S. Cl.
CPC ...
36518901 ; 36518909 ; 365233 ;
Abstract
An improved memory cell (118) is provided which may be incorporated into an array (202) of memory cells. Array (202) includes a first gate conductor region (224) and a second gate conductor region (238), wherein the first and second gate conductor regions are orthogonal to one another. Each one-half of the cell may include two series transistors connected to a cross-coupled trench transistor. Cross-coupling of the trench transistors is effected through the use of parallel local interconnect regions (256) and (258).