Mark Alan Helm

Santa Cruz, CA, United States of America

Mark Alan Helm

USPTO Granted Patents = 123 

 

Average Co-Inventor Count = 2.7

ph-index = 11

Forward Citations = 647(Granted Patents)

Forward Citations (Not Self Cited) = 590(Dec 10, 2025)


Inventors with similar research interests:


Location History:

  • Boise, ID (US) (1996 - 2014)
  • San Jose, CA (US) (2018)
  • Santa Cruz, CA (US) (2012 - 2024)

Company Filing History:


Years Active: 1996-2025

Loading Chart...
Loading Chart...
Areas of Expertise:
Data Query Acceleration
Memory Endurance Metrics
Transistor Design
Error Detection In Memory
Fault Tolerant Memory Systems
Variable Bits Per Cell
Three Dimensional Storage Arrays
Threshold Voltage Calibration
Probabilistic Information Generation
Memory Management Techniques
Chip Enable Pin Status Check
Scalable Word Line Design
123 patents (USPTO):Explore Patents

Article: Mark Alan Helm - A Prolific Innovator in Memory Device Technologies

Mark Alan Helm, an accomplished inventor and technology expert, hails from Santa Cruz, California, US. With an impressive portfolio of 60 patents to his name, Helm has made significant contributions to the field of memory device technologies. His latest patents demonstrate his expertise in areas such as voltage calibration for copyback operations and threshold voltage distribution adjustments for buffers.

One of Helm's recent patents is titled "Read voltage calibration for copyback operation," which outlines a system comprising a memory device and a processing device. This system is designed to read and calibrate voltage levels associated with groups of memory cells. By determining the calibrated read voltage of one group of memory cells, the processing device can assess the bit error rate (BER) of another group of memory cells. This information is essential in determining whether subsequent read voltage calibrations are necessary before performing a copyback operation.

Another notable patent from Helm is "Threshold voltage distribution adjustment for buffer." This patent focuses on a method that involves writing received data sequentially to a cyclic buffer of a memory device using a particular set of threshold voltage distributions. In response to a trigger event, the method initiates a touch-up operation. This operation adjusts the threshold voltage distributions of the data to a second set, allowing for a larger read window between adjacent threshold voltage distributions. This enables optimized data retrieval and storage within the memory device.

Throughout his career, Helm has collaborated with renowned companies such as Micron Technology Incorporated and Intel Corporation. These partnerships allowed Helm to apply his expertise and contribute to cutting-edge developments in memory device technologies. The collaboration with Micron Technology and Intel underscores Helm's influence and the industry's recognition of his expertise.

Working alongside Helm, notable colleagues such as Akira Goda and Jeremy Binfet have further enriched his innovative endeavors. These professional collaborations fostered an environment of knowledge sharing and creative problem-solving, leading to the development of novel solutions in memory device technologies.

Mark Alan Helm's patent portfolio and contributions to the innovations in memory devices showcase his dedication and expertise. His inventions have played a crucial role in advancing the field, improving memory device performance, and enabling more efficient data storage and retrieval systems. Through his work, Helm has contributed significantly to the ever-evolving world of memory device technologies.

This text is generated by artificial intelligence and may not be accurate.
Please report any incorrect information to support@idiyas.com
Loading…