The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 03, 2023

Filed:

Aug. 17, 2020
Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventors:

Niccolo' Righetti, Boise, ID (US);

Kishore K. Muchherla, Fremont, CA (US);

Jeffrey S. McNeil, Jr., Nampa, ID (US);

Akira Goda, Boise, ID (US);

Todd A. Marquart, Boise, ID (US);

Mark A. Helm, Santa Cruz, CA (US);

Gil Golov, Backnang, DE;

Jeremy Binfet, Boise, ID (US);

Carmine Miccoli, Boise, ID (US);

Giuseppina Puzzilli, Boise, ID (US);

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/10 (2006.01); G11C 16/14 (2006.01);
U.S. Cl.
CPC ...
G11C 16/10 (2013.01); G11C 16/14 (2013.01);
Abstract

A method includes during a first portion of a service life of a memory device, programming at least one memory cell of the memory device to a first threshold voltage corresponding to a desired data state. The method can include during a second portion of the service life of the memory device subsequent to the first portion of the service life of the memory device, programming at least one memory cell of the memory device to a second threshold voltage corresponding to the desired data state. The second threshold voltage can be different than the first threshold voltage.


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