Company Filing History:
Years Active: 2005-2008
Title: Marina M Medvedeva: Innovator in Optical Proximity Correction
Introduction
Marina M Medvedeva is a prominent inventor based in Moscow, Russia. She has made significant contributions to the field of optical proximity correction, holding a total of 5 patents. Her work focuses on optimizing the design and manufacturing processes of integrated circuits.
Latest Patents
Among her latest patents is the "Method and apparatus for optimizing fragmentation of boundaries for optical proximity correction (OPC) purposes." This invention aims to enhance the fragmentation of integrated circuit boundaries, balancing the number of vertices and the flexibility of the boundary. It also recovers fragmentation based on the process intensity profile along the ideal edge position to achieve optimal results for OPC. Another notable patent is the "Gradient method of mask edge correction," which introduces a method for making mask edge corrections using a gradient approach for high-density chip designs. This invention employs a newly defined cost function to improve accuracy.
Career Highlights
Marina has worked with notable companies such as LSI Logic Corporation and LSI Corporation. Her experience in these organizations has allowed her to develop and refine her innovative ideas in the semiconductor industry.
Collaborations
Marina has collaborated with esteemed colleagues, including Stanislav V Aleshin and Eugeni E Egorov. Their joint efforts have contributed to advancements in optical proximity correction technologies.
Conclusion
Marina M Medvedeva is a trailblazer in the field of optical proximity correction, with a strong portfolio of patents that reflect her innovative spirit and technical expertise. Her contributions continue to influence the semiconductor industry and pave the way for future advancements.