Tokyo, Japan

Mariko Umeyama


Average Co-Inventor Count = 6.0

ph-index = 1

Forward Citations = 2(Granted Patents)


Company Filing History:


Years Active: 2019-2024

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2 patents (USPTO):Explore Patents

Title: Mariko Umeyama: Innovator in Semiconductor Technology

Introduction

Mariko Umeyama is a prominent inventor based in Tokyo, Japan. She has made significant contributions to the field of semiconductor technology, holding 2 patents that showcase her innovative spirit and technical expertise.

Latest Patents

Umeyama's latest patents include a semiconductor device that features a semiconductor substrate with various components such as an emitter electrode, gate electrode, and multiple active trench gates. This design enhances the functionality and efficiency of semiconductor devices. Another notable patent is for a semiconductor switching element, which includes first and second gate electrodes positioned within trenches that interact with different regions of the semiconductor layer. These inventions reflect her commitment to advancing semiconductor technology.

Career Highlights

Mariko Umeyama is currently employed at Mitsubishi Electric Corporation, where she continues to push the boundaries of innovation in her field. Her work has garnered attention for its potential applications in various electronic devices.

Collaborations

Umeyama collaborates with talented coworkers, including Ryu Kamibaba and Mitsuru Kaneda. Their combined expertise fosters a creative environment that leads to groundbreaking advancements in semiconductor technology.

Conclusion

Mariko Umeyama's contributions to semiconductor technology through her patents and collaborations highlight her role as a leading inventor in the industry. Her work continues to influence the future of electronic devices and innovation.

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