The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 25, 2024
Filed:
Aug. 26, 2015
Mitsubishi Electric Corporation, Tokyo, JP;
Kazuya Konishi, Tokyo, JP;
Yusuke Fukada, Tokyo, JP;
Ryu Kamibaba, Tokyo, JP;
Mariko Umeyama, Tokyo, JP;
Atsushi Narazaki, Tokyo, JP;
Masayoshi Tarutani, Tokyo, JP;
Mitsubishi Electric Corporation, Tokyo, JP;
Abstract
Included are a semiconductor substrate, an emitter electrode formed on the semiconductor substrate, a gate electrode formed on the semiconductor substrate, a source layer of a first conductivity type formed on the semiconductor substrate, a base layer of a second conductivity type formed on the semiconductor substrate, a collector electrode formed under the semiconductor substrate, a plurality of active trench gates formed on a top-surface side of the semiconductor substrate and connected to the gate electrode, and a plurality of dummy trench gates formed on the top-surface side of the semiconductor substrate and not connected to the gate electrode. First structures, each including three or more of the active trench gates arranged side by side, and second structures, each including three or more of the dummy trench gates arranged side by side, are alternately provided.