Mitsubishi Electric Corporation

Mariko Umeyama

Ryu Kamibaba

Tetsuo Takahashi

Kenji Suzuki

Atsushi Narazaki

Masayoshi Tarutani

Koichi Nishi

Kazuya Konishi

Mitsuru Kaneda

Yusuke Fukada

Included are a semiconductor substrate, an emitter electrode formed on the semiconductor substrate, a gate electrode formed on the semiconductor substrate, a source layer of a first conductivity type formed on the semiconductor substrate, a base layer of a second conductivity type formed on the semiconductor substrate, a collector electrode formed under the semiconductor substrate, a plurality of active trench gates formed on a top-surface side of the semiconductor substrate and connected to the gate electrode, and a plurality of dummy trench gates formed on the top-surface side of the semiconductor substrate and not connected to the gate electrode. First structures, each including three or more of the active trench gates arranged side by side, and second structures, each including three or more of the dummy trench gates arranged side by side, are alternately provided.

Semiconductor device

A semiconductor switching element includes a first gate electrode and a second gate electrode. The first gate electrode is disposed, via a first gate insulating film, inside a first trench that extends from an upper surface of an emitter region to reach a semiconductor layer, and intersects with the emitter region, a base region, and a charge storage layer. The second gate electrode is disposed, via a second gate insulating film, inside a second trench that extends from the upper surface of the emitter region and an upper surface of a conductive region to reach the semiconductor layer, and is adjacent to the emitter region, the base region, the charge storage layer, and the conductive region. The second trench is smaller in depth than the first trench, and the second trench is smaller in width than the first trench.

Semiconductor switching element and method of manufacturing the same

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Tokyo, Japan

Mariko Umeyama