San Jose, CA, United States of America

Maria G Guardado


Average Co-Inventor Count = 3.7

ph-index = 5

Forward Citations = 53(Granted Patents)


Company Filing History:


Years Active: 2000-2004

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11 patents (USPTO):Explore Patents

Title: Maria G Guardado: Innovator in Semiconductor Packaging

Introduction

Maria G Guardado is a prominent inventor based in San Jose, CA, known for her significant contributions to the field of semiconductor packaging. With a total of 11 patents to her name, she has made remarkable advancements that have influenced the industry.

Latest Patents

Among her latest patents is the invention titled "Organic packages having low tin solder connections." This innovation provides an organic carrier member for mounting semiconductor devices, featuring solder pads with low amounts of tin and bismuth. The design includes a bismaleimide-triazine epoxy laminate with solder pads that contain no more than about 20 weight percent tin, ensuring a reflow temperature of no greater than about 270°C. Another notable patent is "Controlled and programmed deposition of flux on a flip-chip die by spraying." This method and apparatus allow for the controllable dispensing of flux on substrates with conductive terminals, significantly reducing flux residue after the solder reflow process.

Career Highlights

Maria has worked with leading companies in the technology sector, including Advanced Micro Devices Corporation and Lightwave Microsystems Corporation. Her experience in these organizations has equipped her with the knowledge and skills necessary to innovate in semiconductor technology.

Collaborations

Throughout her career, Maria has collaborated with notable professionals such as Raj N Master and Mohammad Zubair Khan. These partnerships have contributed to her success and the advancement of her inventions.

Conclusion

Maria G Guardado stands out as a key figure in semiconductor packaging innovation. Her patents and career achievements reflect her dedication to advancing technology in this critical field.

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