This inventor holds 1 USPTO granted patent. Top assignee: Taiwan Semiconductor Manufacturing Comp. Ltd.. Active years: 2026.
Company Filing History:
Years Active: 2026
Title: Mao-lin Weng: Innovator in Semiconductor Technology
Introduction
Mao-lin Weng is an inventor based in Taoyuan, Taiwan. He has made significant contributions to the field of semiconductor technology. Although he currently holds no granted patents, his innovative ideas are reflected in his patent applications.
Latest Patent Applications
Mao-lin Weng's notable patent application is titled "SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME." This application describes a semiconductor structure that includes a semiconductor substrate, a gate electrode, a first spacer, and a first contact etch stop layer (CESL). The semiconductor substrate features a fin structure, with the gate electrode positioned over it. The first spacer is located on a lateral side of the gate electrode, and its top surface is inclined towards the gate electrode. The first CESL is situated over the fin structure and contacts the first spacer, maintaining an angle of less than about 140° between the top surface of the first spacer and the sidewall of the first CESL.
Conclusion
Mao-lin Weng is an emerging inventor in the semiconductor field, showcasing his innovative approach through his patent applications. His work has the potential to influence future developments in semiconductor technology.