IDiyas

For the Inventor, By the Inventor

Hyogo, Japan

Mako Kobayashi

USPTO Granted Patents = 18

Average Co-Inventor Count = 4.1

ph-index = 10

Forward Citations = 293(Granted Patents)


Company Filing History:

goldMedal11 out of 21,351 
 
Mitsubishi Denki Kabushiki Kaisha
 patents
silverMedal7 out of 832,680 
Other
 patents

Years Active: 1999-2004

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18 patents (USPTO):Explore Patents
1. 6768354 - Multi-power semiconductor integrated circuit device (2004-07-27),
2. 6700434 - Substrate bias voltage generating circuit (2004-03-02),
3. 6515934 - Semiconductor device including internal potential generating circuit allowing tuning in short period of time and reduction of chip area (2003-02-04),
4. 6515461 - Voltage downconverter circuit capable of reducing current consumption while keeping response rate (2003-02-04),
5. 6472926 - Internal voltage generation circuit (2002-10-29),
6. 6429729 - Semiconductor integrated circuit device having circuit generating reference voltage (2002-08-06),
7. 6424134 - Semiconductor integrated circuit device capable of stably generating internal voltage independent of an external power supply voltage (2002-07-23),
8. 6414881 - Semiconductor device capable of generating internal voltage effectively (2002-07-02),
9. 6392472 - Constant internal voltage generation circuit (2002-05-21),
10. 6337506 - Semiconductor memory device capable of performing stable operation for noise while preventing increase in chip area (2002-01-08),
11. 6333669 - Voltage converting circuit allowing control of current drivability in accordance with operational frequency (2001-12-25),
12. 6331962 - Semiconductor device including voltage down converter allowing tuning in short period of time and reduction of chip area (2001-12-18),
13. 6316985 - Substrate voltage generating circuit provided with a transistor having a thin gate oxide film and a semiconductor integrated circuit device provided with the same (2001-11-13),
14. 6272034 - Semiconductor memory device (2001-08-07),
15. 6215720 - High speed operable semiconductor memory device with memory blocks arranged about the center (2001-04-10),

Title: The Innovative Journey of Mako Kobayashi

Introduction: Mako Kobayashi is a prominent inventor hailing from Hyogo, Japan, known for his contributions to the field of semiconductor technology. With an impressive portfolio of 18 patents, he has made a significant impact on the industry through his innovative designs and solutions.

Latest Patents: Two of Mako Kobayashi’s latest patents showcase his ingenuity. The first is a Multi-power semiconductor integrated circuit device. This invention features power-on detection circuits designed for multiple power supply voltages, allowing for a main power-on detection signal to remain active and reset an internal node efficiently. This innovation notably reduces current consumption during the power-up phase. The second patent, a Substrate bias voltage generating circuit, utilizes oscillation outputs from distinct ring oscillators linked to detector circuits. This design allows a single pump circuit to produce a substrate bias voltage, enhancing circuit efficiency.

Career Highlights: Mako Kobayashi has cultivated a rich career in the semiconductor industry. His expertise has been honed through his tenure at Mitsubishi Electric Corporation, where he has collaborated on various cutting-edge projects.

Collaborations: Throughout his career, Mako has worked alongside talented individuals, including Fukashi Morishita and Akira Yamazaki. Their collaborative efforts have undoubtedly contributed to the advancement of semiconductor technologies and have led to groundbreaking innovations.

Conclusion: Mako Kobayashi's work exemplifies the spirit of innovation in the field of semiconductors. With a solid record of patents and collaborative endeavors, he continues to inspire future generations of inventors and engineers alike. His contributions not only enhance technology but also pave the way for advancements that benefit various sectors of the industry.

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