Company Filing History:
Years Active: 2010-2012
Title: Maki Nangu: Innovator in Semiconductor Technology
Introduction
Maki Nangu is a prominent inventor based in Ashigarakami-gun, Japan. She has made significant contributions to the field of semiconductor technology, holding a total of 4 patents. Her work focuses on innovative methods for producing semiconductor devices and related technologies.
Latest Patents
Maki Nangu's latest patents include advancements in semiconductor devices, methods for producing the same, sensors, and electro-optical devices. One of her notable inventions involves a gate electrode, a gate insulation film, and an inorganic oxide film formed in a specific order on a substrate. This design allows for the formation of source and drain electrodes that partially cover the inorganic oxide film. The oxidation treatment applied reduces the carrier density in the channel region of the semiconductor device. Another patent details a semiconductor device that includes a substrate and a channel region formed above it by printing, ensuring that specific dimensional relationships are satisfied for optimal performance.
Career Highlights
Maki Nangu is currently employed at Fujifilm Corporation, where she continues to push the boundaries of semiconductor technology. Her innovative approach and dedication to research have positioned her as a key figure in her field.
Collaborations
Maki collaborates with talented coworkers, including Atsushi Tanaka and Kohei Higashi, who contribute to her projects and research endeavors.
Conclusion
Maki Nangu's work in semiconductor technology exemplifies her commitment to innovation and excellence. Her patents reflect her expertise and the impact she has made in the industry.