Fujifilm Corporation

Maki Nangu

Atsushi Tanaka

Kohei Higashi

Kenichi Umeda

Ken-Ichi Umeda

A gate electrode, a gate insulation film and an inorganic oxide film are formed in this order on a substrate, and a source electrode and a drain electrode are formed to partially cover the inorganic oxide film. Then, oxidation treatment is applied to reduce the carrier density at a region of the inorganic oxide film which is not covered by the electrodes and is used as a channel region of a semiconductor device.

Semiconductor device, method for producing the same, sensor and electro-optical device

A semiconductor device includes a substrate and a channel region which is formed above the substrate by printing, wherein a relationship L&#x2267;is satisfied where L is a channel length of the channel region and a is a minimum dimension among pattern dimensions and inter-pattern dimensions in the same layer as patterns that define the channel length L; and a relationship W&#x2267;is satisfied where W is a channel width of the channel region and b is a minimum dimension among pattern dimensions and inter-pattern dimensions in the same layer as a pattern that defines the channel width W.

Semiconductor device, manufacturing method of semiconductor device, and display device

During a process of forming an active layer of a semiconductor device using a ZnO film, the ZnO film is laser-annealed with an ultraviolet pulsed laser to reduce the resistance of the film, and then oxidation treatment is applied to increase the specific resistance value at a channel portion of the ZnO film, which once has excessively low resistance after the laser annealing, to 10&#x3a9;&#xb7;cm or more.

Method for producing semiconductor device

A semiconductor device includes a substrate and a semiconductor layer having a channel region, the channel region is made from an oxide semiconductor which satisfies Vc/Va&#x3e;4 where Vc is a volume ratio of a crystalline component and Va is a volume ratio of a non-crystalline component.

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Ashigarakami-gun, Japan

Maki Nangu