The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 02, 2010
Filed:
May. 29, 2009
Applicants:
Kenichi Umeda, Ashigarakami-gun, JP;
Atsushi Tanaka, Ashigarakami-gun, JP;
Kohei Higashi, Ashigarakami-gun, JP;
Maki Nangu, Ashigarakami-gun, JP;
Inventors:
Kenichi Umeda, Ashigarakami-gun, JP;
Atsushi Tanaka, Ashigarakami-gun, JP;
Kohei Higashi, Ashigarakami-gun, JP;
Maki Nangu, Ashigarakami-gun, JP;
Assignee:
FUJIFILM Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/423 (2006.01);
U.S. Cl.
CPC ...
Abstract
During a process of forming an active layer of a semiconductor device using a ZnO film, the ZnO film is laser-annealed with an ultraviolet pulsed laser to reduce the resistance of the film, and then oxidation treatment is applied to increase the specific resistance value at a channel portion of the ZnO film, which once has excessively low resistance after the laser annealing, to 10Ω·cm or more.