The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 02, 2012
Filed:
May. 29, 2009
Applicants:
Atsushi Tanaka, Ashigarakami-gun, JP;
Kenichi Umeda, Ashigarakami-gun, JP;
Kohei Higashi, Ashigarakami-gun, JP;
Maki Nangu, Ashigarakami-gun, JP;
Inventors:
Atsushi Tanaka, Ashigarakami-gun, JP;
Kenichi Umeda, Ashigarakami-gun, JP;
Kohei Higashi, Ashigarakami-gun, JP;
Maki Nangu, Ashigarakami-gun, JP;
Assignee:
FUJIFILM Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 51/40 (2006.01); H01L 21/00 (2006.01); H01L 21/44 (2006.01); B05D 5/12 (2006.01); C23C 14/30 (2006.01);
U.S. Cl.
CPC ...
Abstract
A gate electrode, a gate insulation film and an inorganic oxide film are formed in this order on a substrate, and a source electrode and a drain electrode are formed to partially cover the inorganic oxide film. Then, oxidation treatment is applied to reduce the carrier density at a region of the inorganic oxide film which is not covered by the electrodes and is used as a channel region of a semiconductor device.