Maik Häberlen

Title: Maik Häberlen: Innovator in Semiconductor Technology

Introduction

Maik Häberlen is a notable inventor based in Augsburg, Germany. He has made significant contributions to the field of semiconductor technology, particularly through his innovative patent.

Latest Patents

Häberlen holds a patent for a "Semiconductor layer structure comprising a cavity layer and method for fabricating the semiconductor layer structure." This invention includes a substrate made of semiconductor material, on which a layer made of a second semiconductor material is situated. The patent also describes a region enriched with impurity atoms, which can be located either in the layer or at a specific depth below the interface between the layer and substrate. Additionally, it features a layer within the region enriched with impurity atoms, which comprises cavities produced by ion implantation. The invention further includes at least one epitaxial layer applied to the layer, ensuring that the epitaxial layer is largely crack-free, with a residual strain of less than or equal to 1 GPa.

Career Highlights

Maik Häberlen is currently associated with Siltronic AG, a leading company in the semiconductor industry. His work has been instrumental in advancing semiconductor technologies, contributing to the development of high-quality materials and structures.

Collaborations

Häberlen has collaborated with notable colleagues, including Brian Murphy and Jörg Lindner. Their combined expertise has fostered innovation and progress within their projects.

Conclusion

Maik Häberlen's contributions to semiconductor technology through his patent and work at Siltronic AG highlight his role as a key innovator in the field. His advancements continue to influence the industry and pave the way for future developments.