The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 09, 2014
Filed:
Feb. 02, 2007
Brian Murphy, Pfarrkirchen, DE;
Maik Häberlen, Augsburg, DE;
Jörg Lindner, Bobingen, DE;
Bernd Stritzker, Kissing, DE;
Brian Murphy, Pfarrkirchen, DE;
Maik Häberlen, Augsburg, DE;
Jörg Lindner, Bobingen, DE;
Bernd Stritzker, Kissing, DE;
Siltronic AG, Munich, DE;
Abstract
Semiconductor layer structure and a method for producing a structure are provided, including a substrate made of semiconductor material, on which a layer made of a second semiconductor material is situated, furthermore a region () enriched with impurity atoms, which region is situated either in layer () or at a specific depth below the interface between layer () and substrate (), additionally a layer () within the region () enriched with impurity atoms, which layer comprises cavities produced by ion implantation, furthermore at least one epitaxial layer () applied to layer () and also a defect region () comprising dislocations and stacking faults within the layer () comprising cavities, the at least one epitaxial layer () being largely crack-free, and a residual strain of the at least one epitaxial layer () being less than or equal to 1 GPa.