Jörg Lindner

Title: Jörg Lindner: Innovator in Semiconductor Technology

Introduction

Jörg Lindner is a prominent inventor based in Bobingen, Germany. He has made significant contributions to the field of semiconductor technology, holding two patents that showcase his innovative approach to layered semiconductor structures.

Latest Patents

Lindner's latest patents include a semiconductor layer structure comprising a cavity layer and a method for fabricating this structure. This invention involves a substrate made of semiconductor material, with a layer of a second semiconductor material situated on it. The design includes a region enriched with impurity atoms, which can be found either in the layer or at a specific depth below the interface between the layer and the substrate. Additionally, the structure features a layer within the impurity-enriched region that contains cavities produced by ion implantation. The invention ensures that the at least one epitaxial layer applied to the structure remains largely crack-free, with a residual strain of less than or equal to 1 GPa.

Another notable patent by Lindner provides a method for forming a layered semiconductor structure. This method involves burying a layer of a first semiconductor material within a substrate of at least one second semiconductor material. The process includes creating a buried damage layer that partially adjoins the upper surface of the buried layer and removing the upper part of the substrate to expose the buried layer.

Career Highlights

Jörg Lindner has established himself as a key figure in the semiconductor industry through his work at Siltronic AG. His expertise in semiconductor technology has led to advancements that benefit various applications in electronics.

Collaborations

Lindner has collaborated with notable colleagues, including Bernd Stritzker and Brian Murphy, to further enhance the development of semiconductor technologies.

Conclusion

Jörg Lindner's contributions to semiconductor technology through his innovative patents and collaborations highlight his role as a leading inventor in the field. His work continues to influence advancements in semiconductor structures and methods.