This inventor holds 1 USPTO granted patent and 1 published patent application. Top assignee: Intel Corporation. Active years: 2026.
Company Filing History:
Years Active: 2026
Title: The Innovative Contributions of Madeleine Beasley
Introduction
Madeleine Beasley is a prominent inventor based in Beaverton, OR (US). She has made significant contributions to the field of semiconductor technology. Her work focuses on enhancing the efficiency and effectiveness of semiconductor devices.
Latest Patents
Madeleine Beasley holds a patent for "Gate cut structures formed before dummy gate." This patent introduces techniques to form semiconductor devices with self-aligned gate cut structures. The invention ensures that neighboring semiconductor devices maintain a consistent distance between the gate cut structure and the semiconductor regions, which is crucial for device performance.
Career Highlights
Beasley is currently employed at Intel Corporation, where she applies her expertise in semiconductor technology. Her innovative approach has led to advancements in the design and functionality of semiconductor devices. She has been recognized for her contributions to the field, showcasing her commitment to innovation.
Collaborations
Madeleine has collaborated with notable colleagues, including Leonard P. Guler and Allen B. Gardiner. These partnerships have fostered a collaborative environment that encourages the exchange of ideas and advancements in technology.
Conclusion
Madeleine Beasley is a trailblazer in semiconductor innovation, with her patent and work at Intel Corporation highlighting her significant impact on the industry. Her contributions continue to shape the future of semiconductor technology.