Aachen, Germany

Lutz Nielen


 

Average Co-Inventor Count = 6.2

ph-index = 1

Forward Citations = 2(Granted Patents)


Company Filing History:


Years Active: 2015-2016

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2 patents (USPTO):Explore Patents

Title: Lutz Nielen: Innovator in Memory Technology

Introduction

Lutz Nielen is a prominent inventor based in Aachen, Germany. He has made significant contributions to the field of memory technology, particularly in the development of methods for reading resistive memory elements. With a total of 2 patents to his name, Nielen's work has advanced the understanding and functionality of non-volatile memory systems.

Latest Patents

Nielen's latest patents include a method for capacitively reading resistive memory elements and a method for nondestructively reading resistive memory elements. The first patent describes a technique for reading a non-volatile memory element that has two stable states, 0 and 1. This memory element utilizes resistive memory cells to encode these states, which are characterized by differing capacitances. By connecting a fixed capacitance in series with the memory cell, the signal strength during capacitive read-out is improved. The second patent outlines a method for reading memory elements in a series connection, allowing for the distinction between different state combinations without altering the logic state during the reading process.

Career Highlights

Throughout his career, Nielen has worked with notable organizations such as Forschungszentrum Jülich GmbH and Rheinisch-Westfälische Technische Hochschule Aachen (RWTH). His experience in these institutions has allowed him to collaborate on innovative projects that push the boundaries of memory technology.

Collaborations

Nielen has collaborated with esteemed colleagues, including Eike Linn and Ilia Valov. Their combined expertise has contributed to the advancement of research in the field of resistive memory elements.

Conclusion

Lutz Nielen's contributions to memory technology through his patents and collaborations highlight his role as an influential inventor. His innovative methods for reading resistive memory elements continue to shape the future of non-volatile memory systems.

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