Company Filing History:

8 out of 164,108

International Business Machines Corporation

patents

1 out of 131,214

Samsung Electronics Co., Ltd.

patents

where one patent can have more than one assignee

Years Active: 2014-2021

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8 patents (USPTO):Sort by Forward Citations

Abstract keywords

1. 11164615 - Spin hall write select for magneto-resistive random access memory (2021-11-02),

2. 9947383 - Spin hall write select for magneto-resistive random access memory (2018-04-17),

3. 9799823 - High temperature endurable MTJ stack (2017-10-24),

4. 9715917 - Spin torque MRAM based on Co, Ir synthetic antiferromagnetic multilayer (2017-07-25),

5. 9647204 - Spin torque MRAM based on Co, Ir synthetic antiferromagnetic multilayer (2017-05-09),

6. 9269415 - Utilization of the anomalous hall effect or polarized spin hall effect for MRAM applications (2016-02-23),

7. 8896041 - Spin hall effect assisted spin transfer torque magnetic random access memory (2014-11-25),

8. 8889433 - Spin hall effect assisted spin transfer torque magnetic random access memory (2014-11-18),

Title: The Innovations of Luqiao Liu

Luqiao Liu is a prominent inventor based in Yorktown Heights, NY (US). He has made significant contributions to the field of magneto-resistive random access memory (MRAM) technology. With a total of eight patents to his name, Liu's work has had a substantial impact on the advancement of memory storage solutions.

Latest Patents

One of Luqiao Liu's latest patents is titled "Spin Hall Write Select for Magneto-Resistive Random Access Memory." This invention describes an MRAM cell that includes a transistor, a wire, and a magnetic tunnel junction (MTJ). The MTJ consists of a fixed layer with a fixed magnetic polarity that is electrically connected to the transistor, and a free layer with a variable magnetic polarity that is electrically connected to the wire. An insulator separates the fixed and free layers. The first current that passes through the wire destabilizes the variable magnetic polarity of the free layer. The second current, which flows through the transistor in one of two directions during the first current's passage, directs the variable magnetic polarity of the free layer toward either a parallel or anti-parallel condition with respect to the fixed magnetic polarity of the fixed layer. Ceasing the first current before stopping the second current sets the variable magnetic polarity of the free layer in the desired condition.

Career Highlights

Luqiao Liu has worked with several prestigious companies throughout his career. Notably, he has been associated with International Business Machines Corporation (IBM) and Samsung Electronics Co., Ltd. His experience in these leading technology firms has allowed him to refine his skills and contribute to groundbreaking innovations in memory technology.

Collaborations

Luqiao Liu has collaborated with notable colleagues in his field, including Daniel Christopher Worledge and Jonathan Zanhong Sun. These collaborations have further enhanced his research and development efforts, leading to significant advancements in MRAM technology.

Conclusion

Luqiao Liu's contributions to the field of magneto-resistive random access memory have established him as a key figure in the technology sector. His innovative patents and collaborations with leading companies and colleagues highlight his commitment to advancing memory storage solutions.

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