The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 24, 2017
Filed:
Apr. 08, 2016
International Business Machines Corporation, Amonk, NY (US);
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Guohan Hu, Yorktown Heights, NY (US);
Kwangseok Kim, Seoul, KR;
Younghyun Kim, Seoul, KR;
Junghyuk Lee, Seoul, KR;
Luqiao Liu, Brookline, MA (US);
Jeong-Heon Park, Seoul, KR;
INTERNATIONAL BUSINESS MACHINES CORPORATION, Armonk, NY (US);
SAMSUNG ELECTRONICS CO., LTD., Gyeonggi-Do, KR;
Abstract
Techniques relate to forming a magnetic tunnel junction (MTJ). A magnetic reference layer is formed adjacent to a tunnel barrier layer. The magnetic reference layer includes a pinned layer, a spacer layer adjacent to the pinned layer, and a polarizing enhancement layer adjacent to the spacer layer. A magnetic free layer is formed adjacent to the tunnel barrier layer so as to be opposite the magnetic reference layer.