The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 09, 2017

Filed:

Dec. 05, 2014
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Guohan Hu, Yorktown Heights, NY (US);

Luqiao Liu, Yorktown Heights, NY (US);

Jonathan Z. Sun, Shrub Oak, NY (US);

Daniel C. Worledge, Cortlandt Manor, NY (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 43/10 (2006.01); G11C 11/16 (2006.01); H01L 43/02 (2006.01); H01L 43/08 (2006.01);
U.S. Cl.
CPC ...
H01L 43/10 (2013.01); G11C 11/161 (2013.01); G11C 11/1675 (2013.01); H01L 43/02 (2013.01); H01L 43/08 (2013.01);
Abstract

Magnetic memory devices having an antiferromagnetic reference layer based on Co and Ir are provided. In one aspect, a magnetic memory device includes a reference magnetic layer having multiple Co-containing layers oriented in a stack, wherein adjacent Co-containing layers in the stack are separated by an Ir-containing layer such that the adjacent Co-containing layers in the stack are anti-parallel coupled by the Ir-containing layer therebetween; and a free magnetic layer separated from the reference magnetic layer by a barrier layer. A method of writing data to a magnetic random access memory device having at least one of the present magnetic memory cells is also provided.


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