Luigi Bonanno

Title: Luigi Bonanno: Innovator in Semiconductor Technology

Introduction

Luigi Bonanno is a notable inventor based in Novara, Italy, recognized for his contributions to semiconductor technology. With a total of two patents to his name, Bonanno has made significant advancements in the field of silicon fabrication and doping methods.

Latest Patents

Bonanno's latest patents include a method for the fabrication of indium-doped silicon using the Czochralski method. This innovative approach describes the process of growing a monocrystalline silicon ingot, which involves preparing a silicon melt in a crucible and introducing an inert gas to control the environment. The method allows for precise control of the indium dopant concentration in the ingot by adjusting the inert gas flow rate and the internal pressure of the chamber. Another significant patent focuses on liquid doping systems and methods for controlled doping of single crystal semiconductor materials. This system includes a dopant reservoir and a feeding tube designed to introduce liquid dopants into a melt of semiconductor material, enhancing the efficiency of the doping process.

Career Highlights

Throughout his career, Bonanno has worked with several prominent companies, including Corner Star Limited and MEMC Electronic Materials S.p.A. His experience in these organizations has contributed to his expertise in semiconductor technologies and innovations.

Collaborations

Bonanno has collaborated with notable professionals in the field, including Roberto Scala and Stephan Haringer. These partnerships have further enriched his work and contributed to advancements in semiconductor research.

Conclusion

Luigi Bonanno's contributions to semiconductor technology through his innovative patents and collaborations highlight his role as a significant inventor in the industry. His work continues to influence the development of advanced materials and methods in semiconductor fabrication.