Nanjing, China

Lu-Ping Kong


Average Co-Inventor Count = 4.3

ph-index = 1

Forward Citations = 1(Granted Patents)


Company Filing History:


Years Active: 2022-2025

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9 patents (USPTO):Explore Patents

Title: Innovations of Lu-Ping Kong: A Pioneer in Memory Device Technology

Introduction: Lu-Ping Kong is a renowned inventor based in Nanjing, China, known for his significant contributions to the field of memory devices. With a remarkable portfolio of seven patents, his work has advanced the technology used in signal processing and timing control circuits.

Latest Patents: Among his latest patents are two notable inventions that illustrate his expertise. The first is a "Signal Generator for Controlling Timing of Signal in Memory Device". This device features a first memory subarray, two modulation circuits, and a control signal generator designed to optimize timing signals based on the lengths of different memory subarrays. Another significant patent is the "Timing Control Circuit of Memory Device with Tracking Word Line and Tracking Bit Line". This circuit integrates a memory array and a timing control circuit inclusive of a Schmitt trigger, allowing for enhanced adjustment of voltage levels across multiple bit lines.

Career Highlights: Lu-Ping Kong has enhanced his expertise while working with prominent companies such as Taiwan Semiconductor Manufacturing Company Ltd. and TSMC Nanjing Company, Limited. His experience in these prestigious organizations has played a crucial role in shaping his innovative approach to memory technology.

Collaborations: Throughout his career, Lu-Ping has collaborated with talented individuals, including Xiu-Li Yang and He-Zhou Wan. The exchange of ideas and teamwork among these professionals has contributed significantly to the success of his inventive endeavors.

Conclusion: Lu-Ping Kong's innovative spirit and dedication to advancing memory device technology have made him a pivotal figure in his field. His patents serve not only as a testament to his ingenuity but also as a foundation for future innovations in memory systems.

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