Lu Hao

Title: Innovations of Inventor Lu Hao

Introduction

Lu Hao is a prominent inventor based in Xi'an, China. He has made significant contributions to the field of semiconductor technology, particularly in the development of materials for microwave and millimeter-wave devices. With a total of 2 patents, his work focuses on enhancing device performance through innovative material structures.

Latest Patents

Lu Hao's latest patents include a material structure for low thermal resistance silicon-based gallium nitride microwave and millimeter-wave devices, along with a manufacturing method for the same. This invention features a silicon substrate with a high thermal conductivity dielectric layer, which improves heat dissipation performance. The uneven patterned interfaces in the material structure increase contact areas, thereby reducing thermal boundary resistance and enhancing device efficiency. Additionally, he has developed methods for preparing AlN-based templates and GaN-based epitaxial structures on silicon substrates, which further advance the capabilities of semiconductor devices.

Career Highlights

Lu Hao is affiliated with Xidian University, where he continues to engage in cutting-edge research and development. His work has garnered attention for its practical applications in the electronics industry, particularly in improving the performance of high-frequency devices.

Collaborations

Lu Hao collaborates with notable colleagues, including Zhihong Liu and Junwei Liu, who contribute to his research endeavors. Their combined expertise fosters a dynamic research environment that promotes innovation.

Conclusion

In summary, Lu Hao's contributions to semiconductor technology through his innovative patents and collaborative efforts at Xidian University highlight his role as a leading inventor in the field. His work continues to pave the way for advancements in microwave and millimeter-wave devices.