The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 25, 2024
Filed:
Feb. 08, 2021
Xidian University, Xi'an, CN;
Zhihong Liu, Xi'an, CN;
Junwei Liu, Xi'an, CN;
Jincheng Zhang, Xi'an, CN;
Lu Hao, Xi'an, CN;
Kunlu Song, Xi'an, CN;
Hong Zhou, Xi'an, CN;
Shenglei Zhao, Xi'an, CN;
Yachao Zhang, Xi'an, CN;
Weihang Zhang, Xi'an, CN;
Yue Hao, Xi'an, CN;
Xidian University, Xi'an, CN;
Abstract
A method for preparing an AlN based template having a Si substrate and a method for preparing a GaN based epitaxial structure having a Si substrate are provided. The method for preparing the AlN based template having the Si substrate, which includes: providing the Si substrate; growing an AlN nucleation layer on the Si substrate; and introducing an ion passing through the AlN nucleation layer and into the Si substrate. After the AlN nucleation layer is prepared on the Si substrate, the ions are introduced into the Si substrate and the AlN nucleation layer through the AlN nucleation layer. In this way, types of the introduced ions can be expanded. In addition, a carrier concentration at an interface between the Si substrate and the AlN nucleation layer and a carrier concentration in the AlN nucleation layer can also be reduced.