Long Tian

Title: Long Tian: Innovator in Single-Crystal Beta-GaOMSM Detectors

Introduction

Long Tian is a notable inventor based in Jinan, China. He has made significant contributions to the field of materials science, particularly in the development of advanced detectors. His innovative work has led to the creation of a unique single-crystal beta-GaOMSM detector.

Latest Patents

Long Tian holds a patent for a "Single-crystal beta-GaOMSM detector and preparation method thereof." This invention involves a sophisticated process that includes machining grooves on a single-crystal beta-GaO substrate using a laser-assisted waterjet machining technique. The method further entails wet etching the substrate with an HF solution to eliminate machining damage. After processing, Au evaporation is performed on the substrate's surface, followed by grinding to remove the Au thin film on the undressed surface while retaining it in the grooves. This meticulous process results in the production of the single-crystal beta-GaOMSM detector.

Career Highlights

Throughout his career, Long Tian has worked at prestigious institutions such as Shandong University and Yanshan University. His experience in these academic environments has allowed him to refine his research skills and contribute to significant advancements in his field.

Collaborations

Long Tian has collaborated with esteemed colleagues, including Chuanzhen Huang and Hanlian Liu. These partnerships have fostered a productive exchange of ideas and have been instrumental in the development of his innovative projects.

Conclusion

Long Tian's contributions to the field of materials science, particularly through his patent for the single-crystal beta-GaOMSM detector, highlight his role as a leading inventor. His work continues to influence advancements in detector technology and materials engineering.