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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11735683 B1

PDFFull Text
Date of Patent:
Aug. 22, 2023

Filed:

Feb. 15, 2023

Single-crystal beta-gaomsm detector and preparation method thereof

Applicants:

Shandong University, Shandong, CN;

Yanshan University, Hebei, CN;

Inventors:

Chuanzhen Huang, Qinhuangdao, CN;

Long Tian, Jinan, CN;

Hanlian Liu, Jinan, CN;

Zhenyu Shi, Jinan, CN;

Peng Yao, Jinan, CN;

Dun Liu, Jinan, CN;

Bin Zou, Jinan, CN;

Hongtao Zhu, Jinan, CN;

Zhen Wang, Qinhuangdao, CN;

Minting Wang, Qinhuangdao, CN;

Jun Wang, Qinhuangdao, CN;

Longhua Xu, Qinhuangdao, CN;

Shuiquan Huang, Qinhuangdao, CN;

Meina Qu, Qinhuangdao, CN;

Zhengkai Xu, Qinhuangdao, CN;

Yabin Guan, Qinhuangdao, CN;

Assignees:

SHANDONG UNIVERSITY, Jinan, CN;

YANSHAN UNIVERSITY, Qinhuangdao, CN;

Attorney:

Oliff PLC

Primary Examiner:

Jaehwan Oh

Int. Cl.
CPC ...
H01L 31/18 (2006.01); C01G 15/00 (2006.01); H01L 31/108 (2006.01); H01L 31/0224 (2006.01); C30B 29/16 (2006.01); C30B 33/04 (2006.01); C23C 14/02 (2006.01); C23C 14/18 (2006.01); C23C 14/24 (2006.01); C30B 33/10 (2006.01); H01L 31/032 (2006.01);
U.S. Cl.
CPC ...
H01L 31/18 (2013.01); C01G 15/00 (2013.01); C23C 14/022 (2013.01); C23C 14/028 (2013.01); C23C 14/18 (2013.01); C23C 14/24 (2013.01); C30B 29/16 (2013.01); C30B 33/04 (2013.01); C30B 33/10 (2013.01); H01L 31/022408 (2013.01); H01L 31/1085 (2013.01); H01L 31/032 (2013.01);
Abstract

A single-crystal β-GaOMSM detector and a preparation method thereof, comprising: machining grooves on a single-crystal β-GaOsubstrate using a laser-assisted waterjet machining technique to form a 3D shape; wet etching the machined single-crystal β-GaOsubstrate using an HF solution to remove machining damage; performing Au evaporation on a surface of the single-crystal β-GaOsubstrate after processing, coating an Au thin film on the surface of the single-crystal β-GaOsubstrate; and grinding the surface of the single-crystal β-GaOsubstrate after evaporation to remove the Au thin film on an undressed surface and retain the Au thin film in the grooves, and then obtaining the single-crystal β-GaOMSM detector.

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