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For the Inventor, By the Inventor

Cary, NC, United States of America

Liyong Wang

USPTO Granted Patents = 9 


 

Average Co-Inventor Count = 2.7

ph-index = 2

Forward Citations = 11(Granted Patents)


Location History:

  • Raleigh, NC (US) (2016)
  • Cary, NC (US) (2019 - 2023)

Company Filing History:

goldMedal9 out of 41,498 
 
Qualcomm Incorporated
 patents

Years Active: 2016-2023

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9 patents (USPTO):Explore Patents
1. 11650765 - Apparatus and method for performing persistent write operations using a persistent write command (2023-05-16),
2. 11194524 - Apparatus and method for performing persistent write operations using a persistent write command (2021-12-07),
3. 11016669 - Persistent write data for energy-backed memory (2021-05-25),
4. 10996888 - Write credits management for non-volatile memory (2021-05-04),
5. 10884639 - Providing single data rate (SDR) mode or double data rate (DDR) mode for the command and address (CA) bus of registering clock drive (RCD) for dynamic random access memory (DRAM) (2021-01-05),
6. 10503435 - Providing extended dynamic random access memory (DRAM) burst lengths in processor-based systems (2019-12-10),
7. 10192607 - Periodic ZQ calibration with traffic-based self-refresh in a multi-rank DDR system (2019-01-29),
8. 9343127 - Memory device having an adaptable number of open rows (2016-05-17),
9. 9281036 - Memory device having an adaptable number of open rows (2016-03-08),

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