Liu Xiaoguang

Title: Liu Xiaoguang: Innovator in Field-Effect Bipolar Transistors

Introduction

Liu Xiaoguang is a prominent inventor based in Davis, California. He is known for his significant contributions to the field of semiconductor technology, particularly in the design of transistors. His innovative work has led to the development of a new type of transistor that holds promise for various applications in electronics.

Latest Patents

Liu Xiaoguang holds a patent for a field-effect bipolar transistor (FEBT). The disclosed embodiments relate to the design of this new type of transistor, which includes a substrate that comprises the body of the FEBT. The design features a source made up of an N+ doped region of the substrate and a drain consisting of a P+ doped region. Additionally, the FEBT incorporates one or more gates composed of a dielectric material, along with a low-doped or undoped semiconductor channel that is sandwiched between the gates and the substrate. This innovative structure is bounded by the source and the drain, showcasing Liu's expertise in semiconductor design.

Career Highlights

Liu Xiaoguang is affiliated with the University of California, where he continues to advance his research in semiconductor technology. His work has garnered attention for its potential to improve the efficiency and performance of electronic devices. With a focus on innovation, Liu has made strides in the field that could lead to significant advancements in technology.

Collaborations

Liu has collaborated with notable colleagues, including Mohammad-Hadi Sohrabi and Omeed Momeni. These partnerships have contributed to the development of his groundbreaking research and patents.

Conclusion

Liu Xiaoguang is a key figure in the field of semiconductor innovation, particularly with his work on field-effect bipolar transistors. His contributions are paving the way for future advancements in electronic technology.