The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 03, 2025
Filed:
Aug. 16, 2019
The Regents of the University of California, Oakland, CA (US);
Mohammad-Hadi Sohrabi, Davis, CA (US);
Liu Xiaoguang, Davis, CA (US);
Omeed Momeni, Davis, CA (US);
Mohamadali Malakoutian, Davis, CA (US);
The Regents of the University of California, Oakland, CA (US);
Abstract
The disclosed embodiments relate to the design of a new type of transistor called a 'field-effect bipolar transistor' (FEBT). This FEBT includes a substrate, which comprises a body of the FEBT. It also includes a source comprising an N+ doped region of the substrate, and a drain comprising a P+ doped region of the substrate. The FEBT also includes one or more gates composed of a dielectric material, and a low-doped or undoped semiconductor channel sandwiched between the one or more gates and the substrate, wherein the low-doped or undoped semiconductor channel is bounded by the source and the drain.