University of California

Liu Xiaoguang

Omeed Momeni

Mohamadali Malakoutian

Mohammad-Hadi Sohrabi

The disclosed embodiments relate to the design of a new type of transistor called a 'field-effect bipolar transistor' (FEBT). This FEBT includes a substrate, which comprises a body of the FEBT. It also includes a source comprising an N+ doped region of the substrate, and a drain comprising a P+ doped region of the substrate. The FEBT also includes one or more gates composed of a dielectric material, and a low-doped or undoped semiconductor channel sandwiched between the one or more gates and the substrate, wherein the low-doped or undoped semiconductor channel is bounded by the source and the drain.

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Davis, CA, United States of America

Liu Xiaoguang