Company Filing History:
Years Active: 2025
Title: Liren Li - Innovator in Critical Dimension Error Analysis
Introduction
Liren Li is a prominent inventor based in Shanghai, China. He has made significant contributions to the field of lithography through his innovative methods. His work focuses on improving the accuracy of critical dimension measurements, which are essential in semiconductor manufacturing.
Latest Patents
Liren Li holds a patent for a critical dimension error analysis method. This invention involves a systematic approach to measuring and analyzing critical dimension (CD) values during lithography processes. The method includes steps for removing extreme outliers, rebuilding CD values using a reconstruction model, and modifying machine parameters based on calculated results. This innovative approach allows for quick and accurate analysis of critical dimension errors, enhancing the efficiency of lithography processes.
Career Highlights
Liren Li is associated with Shanghai IC R&D Center Co., Ltd., where he applies his expertise in semiconductor technology. His work has been instrumental in advancing the methodologies used in the industry. With a focus on precision and accuracy, he continues to contribute to the development of innovative solutions in lithography.
Collaborations
Liren Li collaborates with talented individuals such as Xueru Yu and Hongxia Sun. Their combined efforts in research and development have led to advancements in critical dimension measurement techniques.
Conclusion
Liren Li's contributions to the field of critical dimension error analysis highlight his role as an innovator in semiconductor technology. His patent reflects a commitment to enhancing the accuracy of lithography processes, which is crucial for the advancement of the industry.