This inventor holds 3 USPTO granted patents. Top assignee: United States of America as Represented by the Secretary of the Air Force. Active years: 1990-2000.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
Years Active: 1990-2000
Title: Innovations of Lionel R. Friedman
Introduction
Lionel R. Friedman is a notable inventor based in Holden, MA, USA. He has made significant contributions to the field of quantum lasers and electro-optical devices. With a total of three patents to his name, his work has advanced the technology used in various optical applications.
Latest Patents
Friedman's latest patents include the development of silicon-based strain-symmetrized GE-SI quantum lasers. This family of lasers can be readily grown on silicon wafer platforms, featuring a highly doped stably strained SiGe or Ge collector layer. This layer is formed upon a SiGe graded relaxed buffer layer, which is in turn grown on the silicon wafer. Additionally, the lasers incorporate an intrinsic strain-symmetric Ge-Si superlattice, covered by a heavily doped stably strained SiGe emitter. The superlattice consists of numerous thin 8-15 atomic monolayers of interleaved Ge and Si atoms, enabling high stack heights.
Another significant patent is for direct-gap germanium-tin multiple-quantum-well electro-optical devices. These devices include silicon-based laser diodes, optical amplifiers, electro-optical modulators, and photodetectors. The active region of these devices consists of a pseudomorphic GeSn multiple quantum well stack. Each quantum well is a tensile-strained Ge.sub.1-x Sn.sub.x layer sandwiched between compressively strained barriers of Ge.sub.1-y Sn.sub.y. The GeSn quantum wells have a strain-induced direct gap for strongly allowed band-to-band transitions in the infrared range. The quantum well stack is grown upon a relaxed SiGeSn alloy buffer portion, with a graded composition from a lattice match at the silicon substrate interface to a Ge or GeSn composition at the buffer's top surface.
Career Highlights
Friedman has had a distinguished career, working with the United States of America as represented by the Secretary of the Air Force. His innovative work has contributed to advancements in laser technology and electro-optical devices, making him a key figure in his field.
Collaborations
One of his notable collaborators is Richard A. Soref, with whom he has worked on various projects related to his patents.
Conclusion
Lionel R. Friedman is a prominent inventor whose work in quantum lasers and electro-optical devices has made
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
