The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 25, 1990
Filed:
Mar. 15, 1989
Applicant:
Inventors:
Lionel Friedman, Holden, MA (US);
Richard A Soref, Newton Centre, MA (US);
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
G02B / ; H01L / ;
U.S. Cl.
CPC ...
350 9614 ; 350 9613 ; 350 9611 ; 350 9612 ; 350320 ; 357 19 ; 357 20 ; 357 234 ; 357 2312 ; 357 2314 ; 357 30 ;
Abstract
A double-injection transistor structure with an MOS gate is utilized as a guided-wave electro-optic phase modulator at infrared wavelengths in a silicon-on-insulator (SOI) waveguide. Cathode, gate and anode regions are integrated in the waveguide, longitudinally. The effective phase modulation is given by the voltage-variable overlap of the guided-mode optical field with carrier-induced local changes in the silicon refractive index. An electron-hole plasma is injected under the gate by cathode and anode. Using depletion-layer widening, the plasma channel width and mode overlap are controlled very rapidly by one or two low-power gate electrodes.