The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 28, 2000
Filed:
Dec. 04, 1997
Applicant:
Inventors:
Richard A Soref, Newton Centre, MA (US);
Lionel R Friedman, Holden, MA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01S / ; H01L / ;
U.S. Cl.
CPC ...
372 45 ; 372 44 ; 372 43 ; 372 50 ; 257 18 ; 257 19 ; 257191 ;
Abstract
A family of lasers is provided which can be readily grown upon silicon wafer platforms, each laser having a highly doped stably strained SiGe or Ge collector layer formed upon a SiGe graded relaxed buffer layer in turn grown on the Si wafer, and an intrinsic strain-symmetric Ge--Si superlattice covered by a heavily doped stably strained SiGe emitter. The superlattice has numerous thin 8-15 atomic monolayers of interleaved Ge and Si atoms, enabling high stack heights.