Chengdu, China

Linrong He

This inventor holds 2 USPTO granted patents and 1 published patent application. Top assignee: University of Electronic Science and Technology of China. Active years: 2019-2022.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Linrong He. Retrieved from https://idiyas.com/inventor/linrong-he

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 2 

% Patents Active = 50.0

Average Co-Inventor Count = 5.0

ph-index = 1

Forward Citations = 3(Granted Patents)


Company Filing History:


Years Active: 2019-2022

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2 patents (USPTO):Explore Patents

Title: Innovations of Linrong He: A Pioneer in Semiconductor Technology

Introduction: Linrong He, an esteemed inventor based in Chengdu, China, has made significant contributions to the field of semiconductor technology. With two patents to his name, he is recognized for developing advanced devices that enhance power semiconductor applications. His innovative approach focuses on integrating multiple devices into a single chip for optimal performance.

Latest Patents: Linrong He's latest patents showcase his expertise in creating integrated power semiconductor devices. One of his notable inventions is the "Integrated Power Semiconductor Device and Method for Manufacturing the Same." This device features various components, including vertical high voltage devices, high voltage pLDMOS and nLDMOS devices, low voltage NMOS and PMOS devices, low voltage NPN devices, and low voltage diode devices. The design utilizes dielectric isolation for enhanced functionality across different voltage levels.

Another significant patent is the "BCD Semiconductor Device and Method for Manufacturing the Same." This innovative BCD semiconductor device also integrates devices on a single chip, including high voltage nLIGBT, nLDMOS, and pLDMOS devices, alongside low voltage NMOS, PMOS, and PNP devices. The complete isolation between high and low voltage devices is achieved through a combination of dielectric materials and structures, contributing to the efficiency and reliability of the device.

Career Highlights: Linrong He currently works at the University of Electronic Science and Technology of China, where he leverages his expertise in semiconductor technology to educate and inspire future engineers. His deep understanding of the intricacies of semiconductor devices positions him as a prominent figure in his field.

Collaborations: Throughout his career, Linrong He has collaborated with notable colleagues, including Ming Qiao and Chunlan Lai. Their combined expertise has contributed to advancements in semiconductor technologies and has enabled them to push the boundaries of innovation within their research.

Conclusion: Linrong He's contributions to semiconductor technology through his patents firmly establish him as an influential inventor in the field. His work continues to pave the way for advancements that will benefit various applications in electronics, reflecting the importance of innovation in driving the industry forward.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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