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For the Inventor, By the Inventor

Shanghai, China

Limin Weng

USPTO Granted Patents = 10

Average Co-Inventor Count = 4.3

ph-index = 5

Forward Citations = 89(Granted Patents)


Location History:

  • Shanghai, CN (2011 - 2017)
  • Sunnyvale, CA (US) (2018)

Company Filing History:

goldMedal10 out of 749 
 
Alpha & Omega Semiconductor Corporation
 patents

Years Active: 2011-2018

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10 patents (USPTO):
1. 10096588 - TVS structures for high surge and low capacitance (2018-10-09),
2. 9793254 - TVS structures for high surge and low capacitance (2017-10-17),
3. 9252265 - Shielded gate trench MOS with improved source pickup layout (2016-02-02),
4. 8994101 - Shielded gate trench MOS with improved source pickup layout (2015-03-31),
5. 8835977 - TVS with low capacitance and forward voltage drop with depleted SCR as steering diode (2014-09-16),
6. 8580676 - Multiple layer barrier metal for device component formed in contact trench (2013-11-12),
7. 8431457 - Method for fabricating a shielded gate trench MOS with improved source pickup layout (2013-04-30),
8. 8338854 - TVS with low capacitance and forward voltage drop with depleted SCR as steering diode (2012-12-25),
9. 8138605 - Multiple layer barrier metal for device component formed in contact trench (2012-03-20),
10. 7863995 - Methods of achieving linear capacitance in symmetrical and asymmetrical EMI filters with TVS (2011-01-04),

Title: Limin Weng: Innovator in Transient Voltage Suppression Technology

Introduction

Limin Weng is a prominent inventor based in Shanghai, China. He has made significant contributions to the field of semiconductor technology, particularly in the development of transient voltage suppressing (TVS) devices. With a total of 10 patents to his name, Weng continues to push the boundaries of innovation in his field.

Latest Patents

One of Weng's latest patents focuses on TVS structures designed for high surge and low capacitance. This innovative transient voltage suppressing device is formed in an epitaxial layer of a first conductivity type supported on a semiconductor substrate. The device comprises a plurality of contact trenches that extend to a lower part of the epitaxial layer, which are filled with a doped polysilicon layer of a second conductivity type. These trenches are surrounded by a heavy dopant region of the second conductivity type. Additionally, the TVS device includes a metal contact layer on the top surface of the epitaxial layer, which is electrically connected to a Vcc electrode. This metal contact layer directly contacts both the doped polysilicon layer and the heavy dopant region of the second conductivity type.

Career Highlights

Limin Weng is currently employed at Alpha & Omega Semiconductor Corporation, where he continues to develop cutting-edge technologies in semiconductor devices. His work has been instrumental in advancing the performance and reliability of electronic components.

Collaborations

Weng has collaborated with notable colleagues, including Madhur Bobde and Hong Chang, to further enhance the innovation and effectiveness of their projects.

Conclusion

Limin Weng's contributions to the field of transient voltage suppression technology exemplify his dedication to innovation and excellence. His patents and ongoing work at Alpha & Omega Semiconductor Corporation highlight his role as a leading inventor in the semiconductor industry.

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