The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 17, 2017

Filed:

Dec. 09, 2014
Applicants:

Madhur Bobde, Sunnyvale, CA (US);

Wenjiang Zeng, Sunnyvale, CA (US);

Limin Weng, Shanghai, CN;

Inventors:

Madhur Bobde, Sunnyvale, CA (US);

Wenjiang Zeng, Sunnyvale, CA (US);

Limin Weng, Shanghai, CN;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/336 (2006.01); H01L 27/02 (2006.01); H01L 21/822 (2006.01); H01L 21/283 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0248 (2013.01); H01L 21/283 (2013.01); H01L 21/822 (2013.01);
Abstract

A transient voltage suppressing (TVS) device formed in an epitaxial layer of a first conductivity type supported on a semiconductor substrate. The TVS device further comprises a plurality of contact trenches opened and extended to a lower part of the epitaxial layer filled with a doped polysilicon layer of a second conductivity type wherein the trenches are further surrounded by a heavy dopant region of the second conductivity type. The TVS device further includes a metal contact layer disposed on a top surface of the epitaxial layer electrically connected to a Vcc electrode wherein the metal contact layer further directly contacting the doped polysilicon layer and the heavy dopant region of the second conductivity type.


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