The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 30, 2013
Filed:
Mar. 11, 2010
Hong Chang, Cupertino, CA (US);
Yi Su, Sunnyvale, CA (US);
Wenjun LI, Shanghai, CN;
Limin Weng, Shanghai, CN;
Gary Chen, Shanghai, CN;
Jongoh Kim, Suwon, KR;
John Chen, Palo Alto, CA (US);
Hong Chang, Cupertino, CA (US);
Yi Su, Sunnyvale, CA (US);
Wenjun Li, Shanghai, CN;
Limin Weng, Shanghai, CN;
Gary Chen, Shanghai, CN;
Jongoh Kim, Suwon, KR;
John Chen, Palo Alto, CA (US);
Alpha and Omega Semiconductor Incorporated, Sunnyvale, CA (US);
Abstract
A method for fabricating a semiconductor device includes forming a plurality of trenches using a first mask. The trenches include source pickup trenches located in outside a termination area and between two adjacent active areas. First and second conductive regions separated by an intermediate dielectric region are formed using a second mask. A first electrical contact to the first conductive region and a second electrical contact to the second conductive region are formed using a third mask and forming a source metal region. Contacts to a gate metal region are formed using a fourth mask. A semiconductor device includes a source pickup contact located outside a termination region and outside an active region of the device.