Hong Kong, China

Limin Lin

This inventor holds 3 USPTO granted patents. Top assignee: Hong Kong Applied Science and Technology Research Institute. Active years: 2011-2012.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Limin Lin. Retrieved from https://idiyas.com/inventor/limin-lin-b51lggx0

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 33.3

Average Co-Inventor Count = 2.6

ph-index = 1

Forward Citations = 2(Granted Patents)


Company Filing History:


Years Active: 2011-2012

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3 patents (USPTO):Explore Patents

Title: Innovations of Limin Lin in Vertical Light Emitting Diodes

Introduction

Limin Lin is a prominent inventor based in Hong Kong, CN, known for his contributions to the field of semiconductor technology. He has been instrumental in developing innovative methods for fabricating vertical light emitting diodes (LEDs). With a total of 3 patents to his name, Lin's work has significantly advanced the capabilities of LED devices.

Latest Patents

Limin Lin's latest patents include a groundbreaking vertical light emitting diode device structure and a method of fabricating the same. This patent outlines a method for creating a compound semiconductor vertical LED, which involves providing a first growth substrate that supports compound semiconductor epitaxial growth. The process includes forming epitaxial layers of materials such as GaN or InGaN, creating trenches in the semiconductor material, and depositing passivating materials. Additionally, a hard material is deposited in the trenches, followed by a metal layer that undergoes planarization. The method concludes with bonding a new host substrate and dicing to form individual LED devices.

Another notable patent focuses on methods for making quasi-vertical light emitting devices. This method involves growing semiconductor layers on a growth substrate, etching these layers to create device isolation trenches, and drilling blind holes in the substrate. The process includes depositing n-semiconductor metal in the blind holes and forming n-electrode contacts through plating. The substrate is then thinned to expose the n-electrode metal for packaging.

Career Highlights

Limin Lin is affiliated with the Hong Kong Applied Science and Technology Research Institute Company, Limited, where he continues to push the boundaries of LED technology. His innovative approaches have garnered attention in the field and have contributed to advancements in energy-efficient lighting solutions.

Collaborations

Throughout his career, Limin Lin has collaborated with notable colleagues, including Hung Shen Chu and Ka Wah Chan, who have also made significant contributions to semiconductor research and development.

Conclusion

Limin Lin's work in the field of vertical light emitting diodes exemplifies the spirit of innovation and dedication to advancing technology. His patents reflect a commitment to improving the efficiency and functionality of LED devices, making a lasting impact on the industry.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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