The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 10, 2011
Filed:
Mar. 31, 2009
Limin Lin, New Territories, HK;
Hung Shen Chu, New Territories, HK;
Ka Wah Chan, New Territories, HK;
Limin Lin, New Territories, HK;
Hung Shen Chu, New Territories, HK;
Ka Wah Chan, New Territories, HK;
Hong Kong Applied Science and Technology Research Institute Co. Ltd., New Territories, HK;
Abstract
A quasi-vertical light emitting device is provided. According to one embodiment of the present invention, the quasi-vertical light emitting diode includes a sapphire substrate; a plurality of semiconductor layers grown on the sapphire substrate, the plurality of semiconductor layers including an n-GaN layer, an active layer, and a p-GaN layer; a plurality of holes etched in the plurality of semiconductor layers, each of the plurality of holes etched to the sapphire substrate, and a plurality of sapphire holes in the sapphire substrate, each of the plurality of holes aligned with one of the plurality of sapphire holes to form hole walls, the hole walls and bottom deposited with an n-metal and each of the plurality of holes filled with another metal to form a n-electrode contact; an n-mesa in the active layer and the p-GaN layer, the n-mesa deposited with an n-metal and a passivation layer grown over the n-metal; and a p-metal layer deposited on the p-GaN layer, and a p-electrode bonded to the p-metal.