Shanghai, China

Lily Jiang


Average Co-Inventor Count = 3.1

ph-index = 1

Forward Citations = 2(Granted Patents)


Company Filing History:


Years Active: 2012-2016

where 'Filed Patents' based on already Granted Patents

8 patents (USPTO):

Title: The Innovative Contributions of Lily Jiang

Introduction

Lily Jiang is a prominent inventor based in Shanghai, China, known for her significant contributions to the field of semiconductor technology. With a total of eight patents to her name, she has made remarkable advancements that enhance the manufacturing processes of semiconductor devices.

Latest Patents

Among her latest patents is a method for processing a structure in the manufacturing of semiconductor devices. This method involves polishing the structure to create a polished structure that includes a metal member and a dielectric layer. The process further incorporates the application of an organic acid to remove particles that may affect the quality of the semiconductor. Another notable patent is for a surrounding stacked gate fin FET nonvolatile memory structure. This method outlines the steps for forming a silicon-on-insulator substrate, patterning a fin active region, and creating a dielectric composite layer, among other intricate processes.

Career Highlights

Lily Jiang has worked with leading companies in the semiconductor industry, including Semiconductor Manufacturing International Corporation in Shanghai and Beijing. Her experience in these organizations has allowed her to develop and refine her innovative techniques in semiconductor manufacturing.

Collaborations

Throughout her career, Lily has collaborated with esteemed colleagues such as Meng Hong Tsai and Jian Chang. These partnerships have contributed to her success and the advancement of her inventions.

Conclusion

Lily Jiang's work in semiconductor technology exemplifies her dedication to innovation and excellence. Her patents not only reflect her expertise but also contribute significantly to the advancement of the industry.

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